Tantalum nitride

Tantalum nitride
Other names
Tantalum mononitride
12033-62-4 YesY
3D model (Jmol) Interactive image
ECHA InfoCard 100.031.613
EC Number 234-788-4
PubChem 82832
Molar mass 194.955 g/mol
Appearance black crystals
Density 14.3 g/cm3
Melting point 3,090 °C (5,590 °F; 3,360 K)
Hexagonal, hP6
P-62m, No. 189
Flash point Non-flammable
Related compounds
Other cations
Vanadium nitride
Niobium nitride
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Tantalum nitride (TaN) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.[1]


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