Orders of magnitude (capacitance)

This page lists examples of capacitance. Grouped by orders of magnitude.

List of orders of magnitude for capacitance
Factor (Capacitance) SI prefix Value Item
10−45 N/A 1.798 × 10−45 Planck capacitance
10−15 fF 2 fF Gate capacitance of a MOS transistor, per µm of gate width.[1]
10−14 30 fF DRAM cell.[2]
10−13 100 fF Small ceramic capacitor.[3]
150 fF Pin to pin capacitance in a SSOP/TSSOP integrated circuit package.[4][5]
10−12 pF 1 pF Small mica and PTFE capacitor.[3]
2 pF Solderless breadboard, between two adjacent 5-contact columns.[6]
4 pF Capacitive sensing of air-water-snow-ice.[7]
5 pF Low condenser microphone.
10−11 12 pF Typical 10× passive oscilloscope probe.[8]
45 pF Variable capacitor
49 pF Yoga mat of TPE[9] with relative permittivity of 4.5[10] and 8 mm thick sandwiched between two 1 dm² electrodes.
50 pF 1 m of Cat 5 network cable (between the two conductors of a twisted pair)
10−10 100 pF Capacitance of the standard human body model.
1 m of 50 Ω coaxial cable (between the inner and outer conductors)
High condenser microphone.
330 pF Variable capacitor
10−9 nF 1 nF Typical leyden jar.
10−7 100 nF Small aluminium electrolytic capacitor.[3]
820 nF Large mica and PTFE capacitor.[3]
10−6 µF
10−4 100 µF Large ceramic capacitor.[3]
10−3 mF 6.8 mF Small electric double layer supercapacitor.[3]
100 F 1 F Earth–ionosphere capacitance.[11]
1.5 F Large aluminium electrolytic capacitor.[3]
103 kF 5 kF Large electric double layer supercapacitor.[3]

SI multiples

SI multiples for farad (F)
Submultiples Multiples
Value SI symbol Name Value SI symbol Name
10−1 F dF decifarad 101 F daF decafarad
10−2 F cF centifarad 102 F hF hectofarad
10−3 F mF millifarad 103 F kF kilofarad
10−6 F µF microfarad 106 F MF megafarad
10−9 F nF nanofarad 109 F GF gigafarad
10−12 F pF picofarad 1012 F TF terafarad
10−15 F fF femtofarad 1015 F PF petafarad
10−18 F aF attofarad 1018 F EF exafarad
10−21 F zF zeptofarad 1021 F ZF zettafarad
10−24 F yF yoctofarad 1024 F YF yottafarad

This SI unit is named after Michael Faraday. As with every International System of Units (SI) unit named for a person, the first letter of its symbol is upper case (F). However, when an SI unit is spelled out in English, it should always begin with a lower case letter (farad)—except in a situation where any word in that position would be capitalized, such as at the beginning of a sentence or in material using title case. Note that "degree Celsius" conforms to this rule because the "d" is lowercase.— Based on The International System of Units, section 5.2.

See also


  1. Abraham, J.A. (2011-09-07). "CMOS Transistor Theory" (PDF). Department of Electrical and Computer Engineering, The University of Texas at Austin. p. 13. Retrieved 2013-10-04.
  2. Wang, David Tawei (2005). "Modern DRAM Memory Systems: Performance Analysis and a High Performance, Power-Constrained DRAM Scheduling Algorithm" (PDF). department of Electrical & Computer Engineering, University of Maryland. p. 11. Retrieved 2013-10-07.
  3. 1 2 3 4 5 6 7 8 digikey.com - Electronic Parts, Components and Suppliers | DigiKey, 2012-06-05
  4. Clark, Sean. "IC Package Design's Effects on Signal Integrity" (PDF). Fairchild Semiconductor. p. 16. Retrieved 21 November 2014.
  5. "AN-1205 Electrical Performance of Packages" (PDF). Texas Instruments. May 2004. p. 4. Retrieved 21 November 2014.
  6. Jones, David. "EEVblog #568 - Solderless Breadboard Capacitance". EEVblog. Retrieved 24 November 2014.
  7. umanitoba.ca - Capacitive probe for ice detection and accretion rate measurement: proof of concept, 2010, p64
  8. "Test Leads - Oscilloscope Probes". DigiKey. Retrieved 4 December 2014.
  9. treadmillfactory.ca - Deluxe TPE Dual Tone Yoga & Pilates Mat Green -Yoga / Pilates, 2012-06-06
  10. - Dielectric characteristics of static shield for coil-end of gas-insulated transformer, 1992-06-..
  11. Price, Colin (2010). "Seminar in Atmospheric Electricity" (PDF). Department of Geophysics & Planetary Science, Telaviv University. Retrieved 2013-10-04.
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